Gated two-dimensional electron gas in magnetic field: nonlinear versus linear regimes

We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the channel becomes strongly depleted, we see a number of unusual effects related to the magnetic field induced re-distribution of the electron density in the conducting channel. The experimental results obtained in the non-linear regime have been interpreted based on the results obtained in the linear regime by a simple theoretical model, which describes quite well our observations.Comment: 6 pages, 8 figure

ACCOUNTING REPORTS AS SOURCE OF ECONOMIC INFORMATION

In this article importance of accounting (financial) control is examined as a source of many economic indicators of activity of enterprise. Basic analytical indexes, order of their calculation, possible interpretations, influence on judgment of users of accounting (financial) control, are enumerated

Arctic Art & Culture

The popular science review includes the materials about educational, research, scientific and practical activity of the team from the Arctic State Institute of Culture and Arts, their partners, and the Northern Forum regions facilitating the modern image-making of the North and Arctic

ASSESSMENT OF THE FINANCIAL CONDITION OF RUSSIAN BANKS AND WAYS TO IMPROVE

The indicators, necessary for the improvement of the system of assessment of the financial condition of the banks of Russia, have been analyzed. The reasons of inefficient assessment of the bank’s activity results and the resulting negative consequences have been considered. The hypothesis about the necessity of application of methods of forecasting at acceptance of strategically important administrative decisions and expert estimation of a current situation for avoidance of the critical situations, leading to bankruptcy and insolvency in the sphere of bank activity has been put forward. The main causes of crisis situations occurrence, taking into account the dynamics of external and internal indicators, have been considered. A list of indicators, consisting of two groups that should be taken into account when assessing the financial condition of Russian banks, has been presented. Despite the apparent transparency of the indicators under study, a practical problem of forming a single methodology arises, that would lead to a significant increase in the adequacy of assessment of the performance of Russian banks

The role of leasing companies in the economy of the Russian Federation

Increased production and investment in order to meet growing demand are necessary for the sustainable development of the economy. Leasing, as a tool, can significantly help in the implementation of these tasks. It is a signifi factor in economic growth, contributing to an increase in the production volume of goods and services through the creation of new production capacities and the attraction of investment resources. A comparative characteristic of leasing in Russia and other countries of the world has been introduced in the article, the current situation on the Russian market and its expected development in the future is described, the diff rences between leasing and rental relationship have been revealed

Terahertz Generation and Detection by Plasma Waves in Nanometer Gate High Electron Mobility Transistors

The high electron mobility transistors can act as a resonator cavity for the plasma waves that can reach THz frequencies for a nanometer size devices. As was predicted by Dyakonov and Shur in 1993, the steady state of the current flow in a gated 2D electron gas can become unstable leading to the emission of an electromagnetic radiation at the plasma wave frequencies. The theory predicted also that the plasma waves can be used for resonant detection of THz electromagnetic radiation. In the present paper we review our recent experiments on THz emission and detection performed on high electron mobility transistors based on different semiconductor structures: InGaAs/GaAlAs, GaAs/GaAlAs, and Si

Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors

We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers density and drift velocity.Comment: 3 figure